Determination of the noise source parameters in AlInAs/GaInAs HEMT heterostructures based on measured noise temperature dependence on the electric field

Author

Bergamaschi, C. ; Patrick, W. ; Baechtold, W.

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1994

fDate

27-31 Mar 1994

Firstpage

21

Lastpage

24

Abstract

The noise temperature dependence on the electric field in an AlInAs/GaInAs HEMT heterostructure has been measured. It was found that the dependence of the noise temperature on the electric field in GaAs MESFETs and in AlInAs/GaInAs HEMTs are remarkably different. For this reason a different model must be used for AlInAs/GaInAs HEMTs. Based on the measured noise temperature dependence on the electric field, am analytic noise model for the AlInAs/GaInAs HEMT has been developed. The noise source parameters were calculated and compared with extracted noise source parameters from noise measurements

Keywords

III-V semiconductors; aluminium compounds; electric fields; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor device noise; HEMT heterostructures; InP; analytic noise model; electric field; equivalent circuits; noise source parameters; noise temperature dependence; Circuit noise; Electric variables measurement; Electrical resistance measurement; Electromagnetic measurements; Gain measurement; HEMTs; MESFETs; Noise measurement; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328150

Filename

328150