DocumentCode
2147076
Title
Si-based two-terminal resistive switching nonvolatile memory
Author
Jo, Sung Hyun ; Lu, Wei
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
913
Lastpage
916
Abstract
We present recent studies on amorphous silicon (a-Si) based resistive switching nonvolatile memory devices. The devices exhibit excellent performance of high on/off resistance ratio, high yield, fast speed, long retention/endurance and are fully compatible with CMOS processing. High-density crossbar arrays were successfully demonstrated without degradation of the device performance as compared to single cell level devices.
Keywords
CMOS integrated circuits; elemental semiconductors; silicon; storage management chips; Si; compatible with CMOS processing; high-density crossbar arrays; single cell level devices; two-terminal resistive switching nonvolatile memory; Amorphous silicon; CMOS process; Degradation; Electric resistance; Electrodes; Logic devices; Nonvolatile memory; Schottky diodes; Semiconductor materials; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734694
Filename
4734694
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