Title :
Enhancement of endurance for CuxO based RRAM cell
Author :
Yin, Mei ; Zhou, Peng ; Lv, H.B. ; Tang, T.A. ; Chen, B.A. ; Lin, Y.Y. ; Bao, A. ; Chi, M.H.
Author_Institution :
Sch. of Microelectron. & State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
For the first time, we report that the copper oxide (CuxO) based resistive random access memory (RRAM) cell can achieve 104 cycles (i.e. ~10x better) as a new record as well as elimination of the initial ¿forming¿ than reported in literature. The copper oxide is integrated in MIM (metal-insulator-metal) structure and is grown by plasma oxidation of Cu substrate, with CuO near upper surface and graded CuxO (i.e. increasingly Cu rich or O-vacancies rich) toward the Cu substrate. A thinner CuO upper layer can eliminate ¿forming¿ process and, for in turn, greatly enhance the endurance of resistive switching by eliminating the damage during the ¿forming¿ process.
Keywords :
MIM devices; copper compounds; random-access storage; CuxO; MIM structure; RRAM cell; copper oxide; forming process; metal-insulator-metal; resistive random access memory; resistive switching; Chemical analysis; Copper; Deformable models; Electrodes; Oxidation; Plasma applications; Random access memory; Scanning electron microscopy; Spectroscopy; Substrates;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734695
