• DocumentCode
    2147125
  • Title

    Bipolar resistive switching behaviors of Ag/Si3N4/Pt memory device

  • Author

    Sun, B. ; Liu, L.F. ; Wang, Y. ; Han, D.D. ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F.

  • Author_Institution
    Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    925
  • Lastpage
    927
  • Abstract
    The resistive switching behavior of Ag/Si3N4/Pt device was observed and studied for the first time. Resistance ratio larger than 4*102 and 104s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si3N4/Pt devices.
  • Keywords
    MIM devices; platinum; silicon compounds; silver; switching circuits; Ag-Si3N4-Pt; bipolar resistive switching; memory device; metal-insulator-metal capacitor; resistive random access memory; Composite materials; Degradation; Electrodes; Inorganic materials; Microelectronics; Organic materials; Polymer films; Semiconductor materials; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734697
  • Filename
    4734697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147125