DocumentCode :
2147125
Title :
Bipolar resistive switching behaviors of Ag/Si3N4/Pt memory device
Author :
Sun, B. ; Liu, L.F. ; Wang, Y. ; Han, D.D. ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F.
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
925
Lastpage :
927
Abstract :
The resistive switching behavior of Ag/Si3N4/Pt device was observed and studied for the first time. Resistance ratio larger than 4*102 and 104s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si3N4/Pt devices.
Keywords :
MIM devices; platinum; silicon compounds; silver; switching circuits; Ag-Si3N4-Pt; bipolar resistive switching; memory device; metal-insulator-metal capacitor; resistive random access memory; Composite materials; Degradation; Electrodes; Inorganic materials; Microelectronics; Organic materials; Polymer films; Semiconductor materials; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734697
Filename :
4734697
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2147125
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