DocumentCode
2147132
Title
Single layer a-Si GRIN waveguide coupler with lithographically defined facets
Author
Janz, S. ; Lamontagne, B. ; Delâge, A. ; Bogdanov, A. ; Xu, Dan-Xia ; Xu, D.X.
Author_Institution
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fYear
2005
fDate
21-23 Sept. 2005
Firstpage
129
Lastpage
131
Abstract
The fabrication of a monolithically integrated single layer graded index (GRIN) layer waveguide coupler, including a process for creating lithographically defined optical facets, is described. The coupling efficiency of GRIN couplers of varying lengths is measured, yielding an optimal coupling length of 15 μm for a single 3 μm thick a-Si layer on a 0.8 μm Si waveguide.
Keywords
amorphous semiconductors; elemental semiconductors; gradient index optics; integrated optics; optical couplers; optical fabrication; photolithography; silicon; 0.8 mum; 15 mum; 3 mum; a-Si GRIN waveguide coupler; coupling efficiency; graded index layer; lithography; optical facets; Etching; Lenses; Lithography; Optical coupling; Optical refraction; Optical variables control; Optical waveguides; Planar waveguides; Surface waves; Waveguide theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN
0-7803-9070-9
Type
conf
DOI
10.1109/GROUP4.2005.1516427
Filename
1516427
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