• DocumentCode
    2147180
  • Title

    High-performance hetero-nanocrystal memories

  • Author

    Li, Bei ; Zhu, Yan ; Zhou, Huimei ; Liu, Jianlin

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California at Riverside, Riverside, CA, USA
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    947
  • Lastpage
    950
  • Abstract
    Metal-oxide-semiconductor field effect transistor (MOSFET) memories with self-aligned hetero-nanocrystals (TiSi2/Si and Ge/Si) as the floating gates were fabricated and characterized. Better performances were found in hetero-nanocrystal memory, including longer retention time, larger storage capability and improved writing efficiency.
  • Keywords
    MOSFET; nanostructured materials; semiconductor storage; Ge-Si; MOSFET memory; TiSi2-Si; floating gates; hetero-nanocrystal memory; metal-oxide-semiconductor field effect transistor memorie; self-aligned hetero-nanocrystals; storage capability; Atomic force microscopy; Germanium; Hetero-nanocrystal memory; MOSFETs; Nanocrystals; Nonvolatile memory; Self-assembly; Silicon; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734699
  • Filename
    4734699
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147180