Title :
High-performance hetero-nanocrystal memories
Author :
Li, Bei ; Zhu, Yan ; Zhou, Huimei ; Liu, Jianlin
Author_Institution :
Dept. of Electr. Eng., Univ. of California at Riverside, Riverside, CA, USA
Abstract :
Metal-oxide-semiconductor field effect transistor (MOSFET) memories with self-aligned hetero-nanocrystals (TiSi2/Si and Ge/Si) as the floating gates were fabricated and characterized. Better performances were found in hetero-nanocrystal memory, including longer retention time, larger storage capability and improved writing efficiency.
Keywords :
MOSFET; nanostructured materials; semiconductor storage; Ge-Si; MOSFET memory; TiSi2-Si; floating gates; hetero-nanocrystal memory; metal-oxide-semiconductor field effect transistor memorie; self-aligned hetero-nanocrystals; storage capability; Atomic force microscopy; Germanium; Hetero-nanocrystal memory; MOSFETs; Nanocrystals; Nonvolatile memory; Self-assembly; Silicon; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734699
