Title :
Physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals for nanoscale nonvolatile memory applications
Author :
Banerjee, W. ; Maikap, S.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Tao-Yuan, Taiwan
Abstract :
The physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals embedded in high-¿ HfO2/Al2O3 films in an n-Si/SiO2/HfO2/RuO2/Al2O3/Pt memory structure have been investigated. A small size of <10 nm and high-density of ~ 1.6 × 1012/cm2 for the RuO2 nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO2 metal nanocrystals and all high-¿ films have been confirmed by x-ray photoelectron spectroscopy (XPS). A large hysteresis memory window of ¿V¿10.8 V at a gate voltage of Vg = ±10 V has been observed for RuO2 nanocrystal memory capacitors. A hysteresis memory window of ¿V¿2.4 V has also been observed under a small sweeping gate voltage of Vg = ±5 V, due to charge storage in the RuO2 metal nanocrystals. The RuO2 metal nanocrystal memory capacitors have a large breakdown voltage of -15V. A low charge loss of 15% is observed after 10 years of retention.
Keywords :
aluminium compounds; atomic layer deposition; electric breakdown; electric properties; hafnium compounds; high-k dielectric thin films; hysteresis; integrated memory circuits; photoelectron spectroscopy; platinum; ruthenium compounds; silicon compounds; transmission electron microscopy; Si-SiO2-HfO2-RuO2-Al2O3-Pt; X-ray photoelectron spectroscopy; atomic layer deposited nanocrystals; electrical characteristics; high-K films; hysteresis memory; large breakdown voltage; nanoscale nonvolatile memory applications; transmission electron microscope; Atomic layer deposition; Capacitors; Electric variables; High K dielectric materials; High-K gate dielectrics; Nanocrystals; Nonvolatile memory; Substrates; Temperature; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734700
