Title :
Enhanced flash memory device characteristics using ALD TiN/Al2O3 nanolaminate charge storage layers
Author :
Maikap, S. ; Rahaman, S.Z. ; Banerjee, W. ; Lin, C.H. ; Tzeng, P.J. ; Wang, C.C. ; Kao, M.J. ; Tsai, M.J.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
Enhanced flash memory device characteristics using ALD TiN/Al2O3 nanolaminate charge storage layers have been investigated. After annealing treatment, the TiN nanocrystals embedded in Al2O3 films with a small diameter of ~3 nm and a high-density of >1×1012/cm2 have been formed. The memory devices show a high programming speed of ¿Vt >1 V@Vg/Vd=8 V/8 V, 10 ¿s and an erasing speed of ¿Vt >1 V@Vg/Vd=-12 V/0 V, 1 ms. The memory window is increased (¿Vt >6.7 V) with increasing the operation voltage. The memory window is also increased with increasing the number of TiN/Al2O3 nanolaminate layers. Good endurance (104 cycles) and retention (charge loss of ~14% at 20°C and ~17% at 85°C after 10 years) characteristics of the TiN nanocrystal memory devices can be explained by both of the high-density and layer-by-layer charge storage in the TiN nanocrystals. This novel nanocrystal memory structure can be useful in future nanoscale flash memory device applications.
Keywords :
aluminium compounds; annealing; flash memories; nanocomposites; nanotechnology; titanium compounds; ALD nanolaminate charge storage layers; TiN-Al2O3; annealing treatment; charge loss; enhanced flash memory device; erasing speed; layer-by-layer charge storage; programming speed; Atomic layer deposition; Electron traps; Electronics industry; Flash memory; Industrial electronics; Nanocrystals; Nanoscale devices; Plasma temperature; Substrates; Tin;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734702
