Title :
Ultrahigh-aspect-ratio Si and SiO2 deeply-etched periodic structures with extremely smooth surfaces for photonics applications
Author :
Hosomi, K. ; Yamada, H. ; Kikawa, T. ; Goto, S. ; Katsuyama, T. ; Arakawa, Y.
Author_Institution :
Inst. of Industrial Sci., Tokyo Univ., Japan
Abstract :
One-dimensional deeply-etched periodic Si and SiO2 structures were fabricated and had excellent vertical profiles (< 0.5 deg.), ultrahigh aspect ratios (∼ 80) and large etch depths (∼ 20 μm). Low scattering optical loss can be expected by their extremely smooth surfaces.
Keywords :
elemental semiconductors; etching; optical fabrication; optical losses; optical materials; periodic structures; silicon; silicon compounds; Si; Si periodic structure; SiO2; SiO2 periodic structure; aspect ratio; deep etching; scattering optical loss; smooth surfaces; Etching; Light scattering; Optical device fabrication; Optical devices; Optical scattering; Optical surface waves; Oxidation; Periodic structures; Photonics; Textile industry;
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
DOI :
10.1109/GROUP4.2005.1516431
