Growth of chromium doped semi-insulating InP by MOVPE

Author

Harlow, M.J. ; Duncan, W.J. ; Lealman, I.E. ; Spurdens, P.C.

Author_Institution

BT Labs., Ipswich, UK

fYear

1994

fDate

27-31 Mar 1994

Firstpage

64

Lastpage

67

Abstract

Growth of chromium doped InP by atmospheric pressure metal-organic vapour phase epitaxy is reported. Hexacarbonyl chromium and bis-benzene chromium are both shown to be efficient Cr precursors although significant co-incorporation of carbon is a limitation of the former. Structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3×10¹⁶ cm^-3 has been achieved. The resistivity of p-InP/Cr-InP/p-InP structures is as high as 3×10⁸ Ω cm. When this structure is incorporated in buried heterostructure lasers for current blocking, improved performance compared with conventional iron doped structures is observed

Keywords

chromium; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; Cr precursors; InP:Cr; MOVPE; atmospheric pressure metal-organic vapour phase epitaxy; bis-benzene chromium; buried heterostructure lasers; compensating deep donor concentration; current blocking; electrical properties; hexacarbonyl chromium; p-InP/Cr-InP/p-InP structures; resistivity; semi-insulating; structural properties; Chromium; Conductivity; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Iron; Laser transitions; Moisture; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328161

Filename

328161