• DocumentCode
    2147284
  • Title

    Harmonic Power Generation of GaAs-IMPATT Devices up to 240 GHz

  • Author

    Böhm, H. ; Freyer, J. ; Claassen, M.

  • Author_Institution
    Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universitÿt Mÿnchen, ArcisstraÃ\x9fe 21, D-80333 Mÿnchen, Germany. Phone: ++49 (0)89 289-22948, Fax: ++49 (0)89 289-22950, E-mail: aet@ei.tum.de
  • Volume
    2
  • fYear
    1999
  • fDate
    Oct. 1999
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    Cw-harmonic power generation of self-pumped GaAs double-drift IMPATT diodes are investigated both, theoretically and experimentally. Device analysis is carried out by a drift-diffusion model, adjusted by Monte Carlo simulations for the high-field region. The applied disc resonator is numerically calculated by a finite element programme. The optimisation procedure for the harmonic mode IMPATT-oscillator is described. Experimental results are given in the frequency range up to 240 GHz.
  • Keywords
    Current density; Diodes; Electronic mail; Finite element methods; Frequency; Gallium arsenide; Power generation; Power system harmonics; Space charge; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. 29th European
  • Conference_Location
    Munich, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1999.338422
  • Filename
    4139451
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147284