Title :
Silicon resonant cavity enhanced Schottky photodetector at 1.55 μm
Author :
Casalino, M. ; Sirleto, L. ; Moretti, L. ; Libert, S. ; Rendina, I.
Author_Institution :
Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche, Napoli, Italy
Abstract :
In this paper we propose the design of a silicon resonant cavity enhanced Schottky photodetector based on the internal photoemission effect, working at 1.55 μm, and entirely compatible with ULSI silicon technology.
Keywords :
Schottky barriers; Schottky diodes; ULSI; elemental semiconductors; optical design techniques; photodetectors; photodiodes; photoemission; silicon; 1.55 mum; Schottky photodetector; Si; ULSI; internal photoemission effect; silicon resonant cavity design; Costs; Electrons; Optical films; Optical scattering; Photodetectors; Photoelectricity; Resonance; Schottky barriers; Silicon; Ultra large scale integration;
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
DOI :
10.1109/GROUP4.2005.1516432
