• DocumentCode
    2147334
  • Title

    Monolithic integration of Sb-based photopumped lasers on Si

  • Author

    Huffaker, D.L. ; Balakrishnan, G. ; Huang, S. ; Khoshakhlagh, A. ; Dawson, L.R. ; Xin, Y.C. ; Lester, L.

  • Author_Institution
    Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    149
  • Lastpage
    150
  • Abstract
    The monolithic integration of Sb-based electronic and photonic devices on Si is facilitated by a low defect density (<106/cm2) AlSb buffer layer. The buffer forms via a unique growth mode that exploits the very large AlSb/Si lattice mismatch and the strong Al-Sb bond.
  • Keywords
    III-V semiconductors; aluminium compounds; antimony compounds; elemental semiconductors; integrated optoelectronics; monolithic integrated circuits; optical pumping; semiconductor lasers; silicon; AlSb; AlSb buffer layer; AlSb/Si lattice mismatch; Sb-based photopumped lasers; Si; monolithic integration; Capacitive sensors; Gallium arsenide; III-V semiconductor materials; Image resolution; Lattices; Monolithic integrated circuits; Optical materials; Superlattices; Surface emitting lasers; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516434
  • Filename
    1516434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147334