Title :
Monolithic integration of Sb-based photopumped lasers on Si
Author :
Huffaker, D.L. ; Balakrishnan, G. ; Huang, S. ; Khoshakhlagh, A. ; Dawson, L.R. ; Xin, Y.C. ; Lester, L.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
The monolithic integration of Sb-based electronic and photonic devices on Si is facilitated by a low defect density (<106/cm2) AlSb buffer layer. The buffer forms via a unique growth mode that exploits the very large AlSb/Si lattice mismatch and the strong Al-Sb bond.
Keywords :
III-V semiconductors; aluminium compounds; antimony compounds; elemental semiconductors; integrated optoelectronics; monolithic integrated circuits; optical pumping; semiconductor lasers; silicon; AlSb; AlSb buffer layer; AlSb/Si lattice mismatch; Sb-based photopumped lasers; Si; monolithic integration; Capacitive sensors; Gallium arsenide; III-V semiconductor materials; Image resolution; Lattices; Monolithic integrated circuits; Optical materials; Superlattices; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
DOI :
10.1109/GROUP4.2005.1516434
