Title :
Low-temperature processed polycrystalline silicon thin-film transistor with aluminum-replaced source and drain regions
Author :
Zhang, Dongli ; Kwok, Hoi-Sing ; Wong, Man
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
Low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with metal-replaced source and drain regions have been fabricated and characterized. Several technological schemes for replacing poly-Si with aluminum have been investigated and the relative merits of each are compared.
Keywords :
aluminium; elemental semiconductors; low-temperature techniques; semiconductor thin films; silicon; thin film transistors; aluminum-replaced source-drain regions; low-temperature processed polycrystalline silicon TFT; thin-film transistor; Active matrix technology; Aluminum; Artificial intelligence; Displays; Electrodes; Fabrication; Silicon; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734706
