Title :
Ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures
Author :
Agrawal, Nidhi ; Wegener, Martin
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
We report ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures with time constants on the order of 1 picosecond. This should be compared with the previous best values for the standard electron transfer structures in the range of 17-55 picoseconds. All other properties important for high speed applications, for example, electroabsorption and electrical behavior remain essentially unaffected
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; electron mobility; gallium arsenide; high-speed optical techniques; indium compounds; 1 ps; InGaAlAs-InP; InGaAlAs/InP graded-gap electron transfer optical modulator structures; electrical behavior; electroabsorption; high speed applications; time constants; ultrafast electron dynamics; Electron optics; High speed optical techniques; Indium compounds; Indium phosphide; Optical modulation; Optical refraction; Optical variables control; Photonic band gap; Reservoirs; Ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328166
