DocumentCode :
2147384
Title :
A New Approach to Prevent the Burnout Under Mismatching Load Conditions in High Power HBT
Author :
Suzuki, S. ; Yamamoto, K. ; Asada, T. ; Choumei, K. ; Inoue, A. ; Hattori, R. ; Yoshida, N. ; Shimura, T.
Author_Institution :
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan. Tel: +81-727-84-7238, Fax: +81-727-80-2690, E-mail: ssuzuki@lsi.melco.co.jp
Volume :
2
fYear :
1999
fDate :
Oct. 1999
Firstpage :
117
Lastpage :
120
Abstract :
This paper describes a burnout mechanism in high power KBT under mismatching load conditions. Experimental and analytical investigations reveal that the burnout of the HBT is caused by a large amount of base current resulting from avalanche breakdown in a collector-base junction, especially in the case of constant base voltage drive usually employed in high power operation. Based on the investigation, an active feedback circuit is newly proposed to prevent the catastrophic failure, and then the effectiveness of the circuit was successfully confirmed by simulation and experiments.
Keywords :
Circuit testing; Electrical resistance measurement; Failure analysis; Feedback circuits; Heterojunction bipolar transistors; High power amplifiers; Optical amplifiers; Radio frequency; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
Type :
conf
DOI :
10.1109/EUMA.1999.338424
Filename :
4139453
Link To Document :
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