DocumentCode
2147453
Title
High speed SiGe/Si optical modulator
Author
Marris, D. ; Lupu, A. ; Maine, S. ; Cassan, E. ; Vivien, L. ; Pascal, D. ; Bouchier, D. ; Laval, S.
Author_Institution
Dept. of Microelectronic & Optoelectronic Devices, Univ. de Paris-Sud, Orsay, France
fYear
2005
fDate
21-23 Sept. 2005
Firstpage
159
Lastpage
161
Abstract
A modulation-doped SiGe/Si multiple quantum well modulator (MD-MQW) embedded in a reverse biased PIN junction and integrated in a SOI waveguide is described. Experimental evidence of electrorefractive effect is reported and frequency operation is investigated.
Keywords
Ge-Si alloys; electro-optical effects; elemental semiconductors; integrated optics; optical modulation; optical waveguides; p-i-n diodes; quantum well devices; semiconductor doping; silicon; silicon-on-insulator; SOI waveguide; SiGe-Si; SiGe/Si multiple quantum well modulator; electrorefractive effect; modulation doping; reverse biased PIN junction; Diodes; Epitaxial layers; Frequency; Germanium silicon alloys; High speed optical techniques; Optical modulation; Optical refraction; Optical variables control; Optical waveguides; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN
0-7803-9070-9
Type
conf
DOI
10.1109/GROUP4.2005.1516438
Filename
1516438
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