Title :
Next generation solid-state broadband frequency-multiplied terahertz sources
Author :
Siles, J.V. ; Chattopadhyay, G. ; Schlecht, E. ; Lee, C. ; Lin, R. ; Gill, J. ; Ward, J. ; Jung, C. ; Mehdi, I. ; Siegel, P. ; Maestrini, A.
Author_Institution :
NASA Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Planar Schottky diode based frequency multiplied sources are the preferred devices to be used as local oscillators for high resolution heterodyne spectrometers in the terahertz regime in spite of its a priori low overall efficiency and output power. With the latest advances in device optimization and micro-fabrication processes record performances of 50 μW at 1.9 THz and 18 μW at 2.58 THz have been recently demonstrated at room temperature. `On-chip´ power-combining and other novel topologies will be employed together with silicon micromachining techniques to boost up even more the performance for next-generation frequency-multiplied sources. This will enable heterodyne detection up to 4.7 THz and multi-pixel detection beyond 1 THz with all-solid state ultra-compact low-mass tunable and broadband terahertz spectrometers for future astrophysics and planetary science missions as well as on-Earth applications.
Keywords :
Schottky diodes; heterodyne detection; micromachining; optimisation; oscillators; power combiners; silicon; spectrometers; submillimetre wave detectors; all-solid state ultra-compact low-mass tunable terahertz spectrometer; broadband terahertz spectrometer; device optimization; frequency 1.9 THz; frequency 2.58 THz; heterodyne detection; high resolution heterodyne spectrometer; local oscillator; microfabrication process; multipixel detection; next generation solid-state broadband frequency-multiplied terahertz sources; on-chip power-combining; planar Schottky diode; power 18 muW; power 50 muW; silicon micromachining technique; temperature 293 K to 298 K; terahertz regime; Next generation networking; Power amplifiers; Power generation; Schottky diodes; Silicon; System-on-a-chip; Topology;
Conference_Titel :
Antennas and Propagation Society International Symposium (APSURSI), 2012 IEEE
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4673-0461-0
DOI :
10.1109/APS.2012.6348819
