• DocumentCode
    2147455
  • Title

    Next generation solid-state broadband frequency-multiplied terahertz sources

  • Author

    Siles, J.V. ; Chattopadhyay, G. ; Schlecht, E. ; Lee, C. ; Lin, R. ; Gill, J. ; Ward, J. ; Jung, C. ; Mehdi, I. ; Siegel, P. ; Maestrini, A.

  • Author_Institution
    NASA Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2012
  • fDate
    8-14 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Planar Schottky diode based frequency multiplied sources are the preferred devices to be used as local oscillators for high resolution heterodyne spectrometers in the terahertz regime in spite of its a priori low overall efficiency and output power. With the latest advances in device optimization and micro-fabrication processes record performances of 50 μW at 1.9 THz and 18 μW at 2.58 THz have been recently demonstrated at room temperature. `On-chip´ power-combining and other novel topologies will be employed together with silicon micromachining techniques to boost up even more the performance for next-generation frequency-multiplied sources. This will enable heterodyne detection up to 4.7 THz and multi-pixel detection beyond 1 THz with all-solid state ultra-compact low-mass tunable and broadband terahertz spectrometers for future astrophysics and planetary science missions as well as on-Earth applications.
  • Keywords
    Schottky diodes; heterodyne detection; micromachining; optimisation; oscillators; power combiners; silicon; spectrometers; submillimetre wave detectors; all-solid state ultra-compact low-mass tunable terahertz spectrometer; broadband terahertz spectrometer; device optimization; frequency 1.9 THz; frequency 2.58 THz; heterodyne detection; high resolution heterodyne spectrometer; local oscillator; microfabrication process; multipixel detection; next generation solid-state broadband frequency-multiplied terahertz sources; on-chip power-combining; planar Schottky diode; power 18 muW; power 50 muW; silicon micromachining technique; temperature 293 K to 298 K; terahertz regime; Next generation networking; Power amplifiers; Power generation; Schottky diodes; Silicon; System-on-a-chip; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas and Propagation Society International Symposium (APSURSI), 2012 IEEE
  • Conference_Location
    Chicago, IL
  • ISSN
    1522-3965
  • Print_ISBN
    978-1-4673-0461-0
  • Type

    conf

  • DOI
    10.1109/APS.2012.6348819
  • Filename
    6348819