DocumentCode
2147455
Title
Next generation solid-state broadband frequency-multiplied terahertz sources
Author
Siles, J.V. ; Chattopadhyay, G. ; Schlecht, E. ; Lee, C. ; Lin, R. ; Gill, J. ; Ward, J. ; Jung, C. ; Mehdi, I. ; Siegel, P. ; Maestrini, A.
Author_Institution
NASA Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2012
fDate
8-14 July 2012
Firstpage
1
Lastpage
2
Abstract
Planar Schottky diode based frequency multiplied sources are the preferred devices to be used as local oscillators for high resolution heterodyne spectrometers in the terahertz regime in spite of its a priori low overall efficiency and output power. With the latest advances in device optimization and micro-fabrication processes record performances of 50 μW at 1.9 THz and 18 μW at 2.58 THz have been recently demonstrated at room temperature. `On-chip´ power-combining and other novel topologies will be employed together with silicon micromachining techniques to boost up even more the performance for next-generation frequency-multiplied sources. This will enable heterodyne detection up to 4.7 THz and multi-pixel detection beyond 1 THz with all-solid state ultra-compact low-mass tunable and broadband terahertz spectrometers for future astrophysics and planetary science missions as well as on-Earth applications.
Keywords
Schottky diodes; heterodyne detection; micromachining; optimisation; oscillators; power combiners; silicon; spectrometers; submillimetre wave detectors; all-solid state ultra-compact low-mass tunable terahertz spectrometer; broadband terahertz spectrometer; device optimization; frequency 1.9 THz; frequency 2.58 THz; heterodyne detection; high resolution heterodyne spectrometer; local oscillator; microfabrication process; multipixel detection; next generation solid-state broadband frequency-multiplied terahertz sources; on-chip power-combining; planar Schottky diode; power 18 muW; power 50 muW; silicon micromachining technique; temperature 293 K to 298 K; terahertz regime; Next generation networking; Power amplifiers; Power generation; Schottky diodes; Silicon; System-on-a-chip; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium (APSURSI), 2012 IEEE
Conference_Location
Chicago, IL
ISSN
1522-3965
Print_ISBN
978-1-4673-0461-0
Type
conf
DOI
10.1109/APS.2012.6348819
Filename
6348819
Link To Document