DocumentCode
2147476
Title
High resistive undoped Al0.48In0.52As layers grown by MOCVD
Author
Ochi, S. ; Kimura, T. ; Ishida, T. ; Sonoda, T. ; Takamiya, S. ; Mitsui, S.
Author_Institution
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1994
fDate
27-31 Mar 1994
Firstpage
98
Lastpage
101
Abstract
It is shown that the resistivity and the conduction type of undoped MOCVD Al0.48In0.52As layers depend strongly on the growth temperature (450°C-650°C). The conduction type changes from n-type, semi-insulating and p-type with the decrease of the growth temperature. High resistivity over 2×108 Ω-cm is successfully obtained from undoped Al0.48In0.52As layers grown at 500°C. With help of SIMS and ICTS, it is found that the resistivity is substantially determined by the incorporation of carbon whose incorporation rate depends strongly on the growth temperature. The incorporated carbon compensates the native deep donors. The good selective growth of undoped Al0.48In0.52As layers is also achieved at even low growth temperature of 500°C
Keywords
CVD coatings; III-V semiconductors; aluminium compounds; chemical vapour deposition; electrical conductivity of crystalline semiconductors and insulators; indium compounds; secondary ion mass spectra; semiconductor growth; semiconductor thin films; 450 to 650 C; Al0.48In0.52As; MOCVD; SIMS; high resistive undoped Al0.48In0.52As layers; native deep donors; resistivity; Conductivity; Epitaxial growth; Indium phosphide; Lattices; MOCVD; Performance evaluation; Substrates; Surface morphology; Temperature dependence; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328170
Filename
328170
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