Assessment of the structural parameters of GaInAs/GaInAsP strained layer multiquantum wells by X-ray diffraction

Author

de Miguel, J.L. ; Gómez-Salas, E. ; Martín, J.L.

Author_Institution

Telefonica Investigacion y Desarrollo, Madrid, Spain

fYear

1994

fDate

27-31 Mar 1994

Firstpage

102

Lastpage

105

Abstract

The expressions given by the kinematic theory of X-ray diffraction have been particularized to strained layers multiple quantum wells (SL-MQW) of GaInAs/GaInAsP. A procedure based on these expressions is proposed that, with a proper design of the test sample, yields the layer thicknesses and composition of the SL-MQW. This procedure is applied to a sample containing a 20 periods SL-MQW of GaInAs/GaInAsP emitting at 1.55 μm, and the results double checked using the dynamical theory of X-ray diffraction. This procedure is used for the fast and accurate assessment of SL-MQW on a routine basis

Keywords

III-V semiconductors; X-ray diffraction examination of materials; gallium arsenide; gallium compounds; indium compounds; kinematics; semiconductor quantum wells; 1.55 micrometre; GaInAs-GaInAsP; GaInAs/GaInAsP strained layer multiquantum wells; X-ray diffraction dynamical theory; kinematic theory; structural parameters; Atomic layer deposition; Kinematics; Laser sintering; Lattices; Optical reflection; Periodic structures; Physical theory of diffraction; Quantum mechanics; Superlattices; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328171

Filename

328171