Title :
Assessment of the structural parameters of GaInAs/GaInAsP strained layer multiquantum wells by X-ray diffraction
Author :
de Miguel, J.L. ; Gómez-Salas, E. ; Martín, J.L.
Author_Institution :
Telefonica Investigacion y Desarrollo, Madrid, Spain
Abstract :
The expressions given by the kinematic theory of X-ray diffraction have been particularized to strained layers multiple quantum wells (SL-MQW) of GaInAs/GaInAsP. A procedure based on these expressions is proposed that, with a proper design of the test sample, yields the layer thicknesses and composition of the SL-MQW. This procedure is applied to a sample containing a 20 periods SL-MQW of GaInAs/GaInAsP emitting at 1.55 μm, and the results double checked using the dynamical theory of X-ray diffraction. This procedure is used for the fast and accurate assessment of SL-MQW on a routine basis
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; gallium arsenide; gallium compounds; indium compounds; kinematics; semiconductor quantum wells; 1.55 micrometre; GaInAs-GaInAsP; GaInAs/GaInAsP strained layer multiquantum wells; X-ray diffraction dynamical theory; kinematic theory; structural parameters; Atomic layer deposition; Kinematics; Laser sintering; Lattices; Optical reflection; Periodic structures; Physical theory of diffraction; Quantum mechanics; Superlattices; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328171
