Close-spaced MOCVD reactor for 1%-uniformity growth of In-containing materials on 4" substrates

Author

Vernon, S.M. ; Colter, P.C. ; McNulty, D.D. ; Hogan, S.J. ; Weyburne, D.W. ; Ahern, B.S.

Author_Institution

Spire Corp., Bedford, MA, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

137

Lastpage

140

Abstract

We have designed, built, and characterized a reactor for highly uniform, abrupt-interface growth of InP and other materials onto 4"-diameter substrates. The reaction chamber features a water-cooled “showerhead”-type distributed injection scheme located in close proximity to the wafer. Metalorganic chemical vapor deposition (MOCVD) growth in this system has resulted in very uniform layers (better than 1% for both thickness and composition) of Ga_(1-x/)Insub (x/)As, Ga_(1-x/)Insub (x/)P, Al_(x/)Gasub (1-x/)As, InP, and GaAs on 4" substrates

Keywords

III-V semiconductors; chemical vapour deposition; indium compounds; semiconductor growth; 4 in; AlGaAs; GaAs; GaInAs; GaInP; In-containing materials; InP; abrupt-interface growth; close-spaced MOCVD reactor; large area substrates; uniform layers; water-cooled showerhead-type distributed injection; Chemical vapor deposition; Cooling; Fluid flow; Indium phosphide; Inductors; Laboratories; MOCVD; Resistance heating; Steel; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328172

Filename

328172