Title :
Reducing threshold voltage of organic field-effect transistor by using ZrO2/PMMA as gate dielectric
Author :
Shang, Liwei ; Ming Liu ; Tu, Deyu ; Zhen, Lijuan ; Liu, Ge ; Ge Liu
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
By depositing a PMMA (poly(methyl methacrylate)) layer on top of an evaporated layer of ZrO2, the leakage has 4 orders of magnitude reducing compared with bare ZrO2 layer. Low roughness of PMMA/ZrO2 surface produces a high quality interface between the organic semiconductor and the combined insulator, thus the device has a significant improvement in performance. The typical field effect mobility, on/off current ratio, and sub-threshold slope of OFETs with bilayer dielectric are 5.6×10-2 cm2/Vs, 1.2×103, and 0.3 V/decade respectively. It is noticeable that the threshold voltage is only 0.1 V.
Keywords :
carrier mobility; conducting polymers; dielectric materials; high-k dielectric thin films; organic field effect transistors; organic semiconductors; surface roughness; zirconium compounds; OFET; PMMA; ZrO2; bilayer dielectric; evaporated layer; field effect mobility; gate dielectric; high-k material; leakage; on-off current ratio; organic field-effect transistor; organic semiconductor; poly(methyl methacrylate) layer; subthreshold slope; surface roughness; threshold voltage; Crystalline materials; Dielectric measurements; Dielectric substrates; Dielectric thin films; High K dielectric materials; High-K gate dielectrics; OFETs; Organic semiconductors; Semiconductor materials; Threshold voltage; OFET; PMMA; Thin film; ZrO2;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734713
