• DocumentCode
    2147544
  • Title

    The dislocation generation mechanism of InxGa1-x As epilayers (0.32⩽2⩽1) grown on InP substrates by molecular-beam epitaxy

  • Author

    Chang, Shou-Zen ; Lee, Si-Chen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    106
  • Lastpage
    109
  • Abstract
    The dislocation generation mechanism of the InxGa1-xAs epilayers grown on InP substrates with 0.32⩽2⩽1 were investigated. It was found that the growth mode is not only dependent on the lattice mismatch, the abundance of Ga atoms and the degree of cation disorder in the alloy composition also play important roles. In the negative mismatched range even with a medium lattice mismatch, InGaAs alloys with high degree of cation disorder and containing more Ga atoms (x=0.32-0.37) trigger island growth and introduce high-density dislocations
  • Keywords
    III-V semiconductors; dislocation density; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; InxGa1-xAs epilayers; InGaAs; InP; InP substrates; alloy composition; cation disorder; dislocation generation; growth; heteroepitaxy; high-density dislocations; island growth; lattice mismatch; molecular-beam epitaxy; Gallium alloys; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Microscopy; Molecular beam epitaxial growth; Optical fiber communication; Solids; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328173
  • Filename
    328173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147544