Title :
Observation of rhodium- and iridium-related deep levels in In0.53Ga0.47As
Author :
Srocka, B. ; Scheffler, H. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
We investigated the doping of In0.53Ga0.47As with rhodium and iridium by Liquid Phase Epitaxy and observed for the first time Rh- and Ir-related levels in InGaAs by means of Deep Level Transient Spectroscopy. Both dopants were found to produce near-midgap levels. The available data support an association of these levels with the TM2+/3+-single acceptor transitions caused by substitutionally incorporated TM-ions on cation sites. The distribution coefficients determined from the trap concentrations in the layers are rather small, of the order of 1×10-6
Keywords :
III-V semiconductors; deep level transient spectroscopy; gallium arsenide; impurity electron states; indium compounds; iridium; liquid phase epitaxial growth; rhodium; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; DLTS; In0.53Ga0.47As:Ir; In0.53Ga0.47As:Rh; deep levels; distribution coefficients; doping; liquid phase epitaxy; near-midgap levels; single acceptor transitions; substitutional ions; trap concentrations; Doping; Electron traps; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Iron; Lattices; Mass spectroscopy; Purification; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328174
