Title :
35 GHz bandwidth germanium-on-silicon photodetector
Author :
Rouvtere, M. ; Vivien, L. ; Le Roux, X. ; Mangeney, J. ; Crozat, P. ; Hoarau, C. ; Cassan, E. ; Pascal, D. ; Laval, S. ; Fédéli, J.M. ; Damlencourt, J.F. ; Hartmann, J.-M. ; Kolev, S.
Author_Institution :
IEF, Univ. de Paris-Sud, Orsay, France
Abstract :
A 3 dB bandwidth of 35 GHz at 1.31 μm and 1.55 μm wavelengths is reported for inter-digited germanium on silicon-on-insulator metal-semiconductor-metal photodetector with finger spacing of 500 nm.
Keywords :
elemental semiconductors; germanium; metal-semiconductor-metal structures; photodetectors; silicon-on-insulator; 1.31 mum; 1.55 mum; 35 GHz; 500 nm; germanium-on-silicon photodetector; metal-semiconductor-metal photodetector; silicon-on-insulator; Absorption; Bandwidth; Electrodes; Fingers; Frequency measurement; Germanium; High speed optical techniques; Optical films; Photodetectors; Silicon on insulator technology;
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
DOI :
10.1109/GROUP4.2005.1516443
