Title :
AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode
Author :
Wu, Chia-Hsuan ; Lin, Che-Kai ; Lin, Chao-Wei ; Chiu, Hsien-Chin
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Tao-Yuan, Taiwan
Abstract :
In this study we manufacture AZO transparent thin films with E-gun evaporator and change the flow rate of oxygen to find which parameter can fabricate the best quality AZO thin films. After analyze the material characteristics of AZO thin films we fabricated. We can acquire the best parameter is heating the substrate to 150°C and without oxygen flow. With this parameter, we can obtain AZO thin film with transparency above 90% and extremely low resistivity reach to 2.4 × 10-4 (ohm-cm). Apply its on light emitting diode can also get large profit in luminescence.
Keywords :
II-VI semiconductors; aluminium; light emitting diodes; luminescence; semiconductor thin films; vacuum deposition; wide band gap semiconductors; zinc compounds; AZO thin film material characteristics; AZO transparent thin film manufacture; E-gun evaporate procedure; ZnO:Al; aluminium doped zinc oxide thin films; extremely low resistivity film; light emitting diode application; luminescence; temperature 150 C; Conductivity; Indium tin oxide; Light emitting diodes; Optical films; Plasma temperature; Sputtering; Substrates; Transistors; X-ray scattering; Zinc oxide;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734716
