Title :
Extremely broadband InGaAsP/InP superluminescent diodes
Author :
Shmavonyan, G. Sh ; Zendehbad, S.M.
Author_Institution :
State Eng. Univ. of Armenia, Yerevan, Armenia
Abstract :
For superluminescent diodes fabricated on the substrate with five 6 nm InGaAsP quantum wells and two 15 nm InGaAsP quantum wells, a very broad emission spectrum is obtained. The spectral width is nearly 400 nm, covering the range from 1250 nm to 1650 nm.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nanoelectronics; nanofabrication; quantum well devices; semiconductor quantum wells; superluminescent diodes; InGaAsP-InP; InP; broad emission spectral width; broadband superluminescent diode fabrication; quantum wells; size 15 nm; size 6 nm; wavelength 1250 nm to 1650 nm; Bandwidth; Carrier confinement; Communications technology; Current measurement; Fabrication; Indium phosphide; Optical fiber communication; Optical fibers; RNA; Superluminescent diodes;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734717
