Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP

Author

Herzinger, C.M. ; Snyder, P.G. ; Celii, F.G. ; Kao, Y.C. ; Johs, B. ; Woollam, J.A.

Author_Institution

Dept. of Electr. Eng., Nebraska Univ., Lincoln, NE, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

122

Lastpage

125

Abstract

Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports

Keywords

III-V semiconductors; aluminium compounds; ellipsometry; indium compounds; optical constants; optical variables measurement; semiconductor epitaxial layers; thickness measurement; AlAs; InAs; InP; InP substrate; RHEED ports; data acquisition; ellipsometer probe; ellipsometric thickness measurements; growth chamber retrofitting; in situ thickness control; in situ thickness monitoring; lattice matched InGaAs buffer layers; optical constants; simultaneous data analysis; strained layers; Buffer layers; Data acquisition; Data analysis; Indium gallium arsenide; Indium phosphide; Lattices; Monitoring; Optical buffering; Probes; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328177

Filename

328177