Aging behavior of InP substrates prepared with 2 different epi-ready processes

Author

Regreny, P. ; Jacob, G. ; Gendry, M. ; Hollinger, G. ; Gauneau, M. ; Lecrosnier, W. ; Benyattou, T.

Author_Institution

Crismatec InPact, Moutiers, France

fYear

1994

fDate

27-31 Mar 1994

Firstpage

130

Lastpage

132

Abstract

In this work we investigate the aging behavior of InP substrates prepared with 2 different epi-ready processes based on “thin” 4-5 Å and “thick” 7-8 Å oxide layers. The oxide layers are characterized by X-ray photoelectron spectroscopy (XPS) after storage in both air and nitrogen. While there is no variation of the oxide thickness when substrates are stored under nitrogen, for a “thin” 4-5 Å oxide layer stored in air, the oxide thickness increases with time. However the photoluminescence behavior of MBE grown InAs/AlInAs quantum wells localised near the interface and SIMS profiles show no aging effect after 6 months if an optimized oxide desorption procedure (In stabilization of the surface) is used

Keywords

III-V semiconductors; X-ray photoelectron spectra; ageing; indium compounds; oxidation; photoluminescence; protective coatings; substrates; 4 to 8 A; In stabilization; InP; InP substrates; InP-InO; MBE grown InAs/AlInAs quantum wells; N₂ storage; SIMS profiles; X-ray photoelectron spectroscopy; XPS; aging behavior; air storage; epi-ready processes; optimized oxide desorption procedure; oxide layers; oxide thickness; photoluminescence behavior; Aging; Indium phosphide; Molecular beam epitaxial growth; Nitrogen; Oxidation; Photoluminescence; Protection; Spectroscopy; Substrates; Surface contamination;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328179

Filename

328179