• DocumentCode
    2147741
  • Title

    Emerging memories

  • Author

    Baldi, Livio ; Sandhu, Gurtej

  • Author_Institution
    RD Process Dev., Micron Semicond. Italia, Agrate Brianza, Italy
  • fYear
    2013
  • fDate
    16-20 Sept. 2013
  • Firstpage
    30
  • Lastpage
    36
  • Abstract
    Scaling of conventional charge-storage memories is becoming increasingly harder. Several new memory concepts (emerging memory: EM) are vying for the position of mainstream replacement. The landscape of EM technologies will be reviewed, with special attention to the most mature ones. The challenges for their integration in complex memory systems will be highlighted.
  • Keywords
    integrated memory circuits; random-access storage; EM technology; complex memory systems; conventional charge-storage memories; emerging memories; mainstream replacement; memory concepts; scaling; Arrays; Microprocessors; Phase change materials; Programming; Random access memory; PCM; RRAM; STRAM; array; emerging memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
  • Conference_Location
    Bucharest
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2013.6818813
  • Filename
    6818813
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147741