DocumentCode :
2147741
Title :
Emerging memories
Author :
Baldi, Livio ; Sandhu, Gurtej
Author_Institution :
RD Process Dev., Micron Semicond. Italia, Agrate Brianza, Italy
fYear :
2013
fDate :
16-20 Sept. 2013
Firstpage :
30
Lastpage :
36
Abstract :
Scaling of conventional charge-storage memories is becoming increasingly harder. Several new memory concepts (emerging memory: EM) are vying for the position of mainstream replacement. The landscape of EM technologies will be reviewed, with special attention to the most mature ones. The challenges for their integration in complex memory systems will be highlighted.
Keywords :
integrated memory circuits; random-access storage; EM technology; complex memory systems; conventional charge-storage memories; emerging memories; mainstream replacement; memory concepts; scaling; Arrays; Microprocessors; Phase change materials; Programming; Random access memory; PCM; RRAM; STRAM; array; emerging memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location :
Bucharest
Type :
conf
DOI :
10.1109/ESSDERC.2013.6818813
Filename :
6818813
Link To Document :
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