Title :
Study of asymmetric broadening of Raman scattering in InxGa1-xAs/InP and InxGa1-xAs/GaAs epilayers
Author :
Shen, J.L. ; Chang, S.Z. ; Lee, S.C. ; Chen, Y.F.
Author_Institution :
Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Raman scattering of InxGa1-xAs epitaxial layers on InP and GaAs substrates have been investigated with a wide range of composition. It is found that the asymmetric broadening of LO phonon modes varies with composition as well as substrate. With the one-parameter spatial correlation model, the Raman lineshapes have been analyzed, but the fits showed some deviation to the experiments. Comparing the Raman spectra with the measurements of double-crystal X-ray diffraction (DXRD), we found that, besides the alloy disorder, the Raman lineshapes are also influenced by the structural dislocation. Our results provide a framework for the use of the two-parameter spatial correlation model in the study of the Raman spectra in epilayer structures
Keywords :
III-V semiconductors; Raman spectra; Raman spectra of inorganic solids; X-ray diffraction examination of materials; gallium arsenide; indium compounds; semiconductor epitaxial layers; spectral line breadth; GaAs substrate; InxGa1-xAs epitaxial layers; InGaAs-GaAs; InGaAs-InP; InP substrate; LO phonon modes; Raman lineshapes; Raman scattering; alloy disorder; asymmetric broadening; composition; double-crystal X-ray diffraction; one-parameter spatial correlation model; structural dislocation; two-parameter spatial correlation model; Displays; Fluctuations; Gallium arsenide; Indium phosphide; Microscopy; Phonons; Raman scattering; Residual stresses; Semiconductor process modeling; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328180
