• DocumentCode
    2147771
  • Title

    Characterisation of 210 GHz Pulsed GaAs IMPATT Diode

  • Author

    Benz, Christian ; Freyer, Jürgen

  • Author_Institution
    Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universitÿt Mÿnchen, D-80290 Mÿnchen, Germany. Phone: +49(0)89 28922948, Fax: +49(0)89 28922950, eMail: aet@ei.tum.de
  • Volume
    2
  • fYear
    1999
  • fDate
    Oct. 1999
  • Firstpage
    173
  • Lastpage
    176
  • Abstract
    GaAs double-drift Read IMPATT diodes are designed for pulsed operation up to 210 GHz with extremely high current densities (225 kA/cm2). The optimisation of the active device and the applied resonator structure is carried out by the help of simulation programmes. The experimental results show RF output power levels of 0.7 W at 200 GHz and 0.25 W at 210 GHz.
  • Keywords
    Current density; Diodes; Doping; Electrons; Gallium arsenide; Gold; Heat sinks; Power generation; Radio frequency; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. 29th European
  • Conference_Location
    Munich, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1999.338438
  • Filename
    4139467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147771