Title :
A 2 Watt, High Gain Ka-Band MMIC Amplilfier Design Utilizing A Ternary Power Combining of P-HEMTs
Author :
Ruberto, Mark N. ; Madjar, Asher
Author_Institution :
Department of Microwave and Millimeter-wave Subsystems, RAFAEL, P.O. Box 2250 / 87, Haifa 31021 Israel. Tel. No. +972-4-8794360 Fax No. +972-4-8792037, e-mail: mruberto@rafael.co.il
Abstract :
A 2 Watt Ka-band MMIC power amplifier was designed using a ternary combination of power P-HEMT devices as a means to reduce the chip size. The three-staged amplifier exhibited a large signal gain of 12-15 dB over a bandwidth of 36-39 GHz. The design was very robust with RF/DC wafer yields of 60-70%.
Keywords :
Bandwidth; FETs; Foundries; Frequency shift keying; MMICs; Microstrip; Power amplifiers; Power generation; Radiofrequency amplifiers; Topology;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338440
