Demonstration of short range non-uniformities of the spectral parameters of photoluminescence bands in lattice mismatched InAlAs/InGaAs/InAlAs/InP heterostructures

Author

Klingelhöfer, C. ; Krawczyk, S.K. ; Nuban, W. ; Gendry, M.

Author_Institution

Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France

fYear

1994

fDate

27-31 Mar 1994

Firstpage

144

Lastpage

147

Abstract

A wide range of InAlAs/InGaAs/InAlAs/InP and InGaAs/InP lattice mismatched heterostructures with different thicknesses and compositions of the InGaAs layer were grown on InP (001) by Molecular Beam Epitaxy (MBE) and investigated with high spatial resolution spectrally resolved scanning photoluminescence. The objective of this contribution is to demonstrate that different types of extended defects (misfit dislocations, threading dislocations, oval-shaped defects) and structural micro-heterogeneity in the InGaAs layers induce significant short range changes of the spectral parameters of the photoluminescence bands

Keywords

III-V semiconductors; aluminium compounds; dislocations; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor junctions; InAlAs-InGaAs-InAlAs-InP; InAlAs/InGaAs/InAlAs/InP; InGaAs/InP; InGaAsP-InP; InP(001); MBE; extended defects; lattice mismatched heterostructures; misfit dislocations; oval-shaped defects; scanning photoluminescence; short range nonuniformities; spectral parameters; structural micro-heterogeneity; threading dislocations; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photoluminescence; Photonic band gap; Spatial resolution; Surface emitting lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328182

Filename

328182