• DocumentCode
    2147830
  • Title

    Optimization of TAB inner lead bonding process

  • Author

    Jung, Ilgyu ; Lee, Taekoo ; Baek, Joonghyun ; Kim, Hyungho

  • Author_Institution
    Package Dev. Sec., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
  • fYear
    1996
  • fDate
    5-7 Mar 1996
  • Firstpage
    129
  • Lastpage
    135
  • Abstract
    Delamination has occurred at the adhesive which is subject to thermal damage. The heat from the hot bonding tool transfers to the adhesive through the leadframe and degrades the thermally weak adhesive during the TAB ILB (inner lead bonding) process. It is essential to retain the temperature at the adhesive below its degradation temperature. In this study, the effect of the temperature of the heat cartridge in the bonding tool and the dwell time on degradation of the adhesive was investigated, using finite volume method. As a result, the optimized process condition avoiding degradation of the adhesive was proposed. In addition, the effect of this temperature on bondability of the Au bump was also taken into consideration
  • Keywords
    delamination; finite element analysis; integrated circuit interconnections; lead bonding; tape automated bonding; temperature distribution; ILB; TAB; bondability; degradation temperature; delamination; dwell time; finite volume method; heat cartridge; hot bonding tool; inner lead bonding process; optimized process condition; thermal damage; thermally weak adhesive; Bonding processes; Boundary conditions; Computational fluid dynamics; Delamination; Flowcharts; Gold; Packaging; Steady-state; Temperature distribution; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium, 1996. SEMI-THERM XII. Proceedings., Twelfth Annual IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    1065-2221
  • Print_ISBN
    0-7803-3139-7
  • Type

    conf

  • DOI
    10.1109/STHERM.1996.545102
  • Filename
    545102