DocumentCode
2147830
Title
Optimization of TAB inner lead bonding process
Author
Jung, Ilgyu ; Lee, Taekoo ; Baek, Joonghyun ; Kim, Hyungho
Author_Institution
Package Dev. Sec., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
fYear
1996
fDate
5-7 Mar 1996
Firstpage
129
Lastpage
135
Abstract
Delamination has occurred at the adhesive which is subject to thermal damage. The heat from the hot bonding tool transfers to the adhesive through the leadframe and degrades the thermally weak adhesive during the TAB ILB (inner lead bonding) process. It is essential to retain the temperature at the adhesive below its degradation temperature. In this study, the effect of the temperature of the heat cartridge in the bonding tool and the dwell time on degradation of the adhesive was investigated, using finite volume method. As a result, the optimized process condition avoiding degradation of the adhesive was proposed. In addition, the effect of this temperature on bondability of the Au bump was also taken into consideration
Keywords
delamination; finite element analysis; integrated circuit interconnections; lead bonding; tape automated bonding; temperature distribution; ILB; TAB; bondability; degradation temperature; delamination; dwell time; finite volume method; heat cartridge; hot bonding tool; inner lead bonding process; optimized process condition; thermal damage; thermally weak adhesive; Bonding processes; Boundary conditions; Computational fluid dynamics; Delamination; Flowcharts; Gold; Packaging; Steady-state; Temperature distribution; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 1996. SEMI-THERM XII. Proceedings., Twelfth Annual IEEE
Conference_Location
Austin, TX
ISSN
1065-2221
Print_ISBN
0-7803-3139-7
Type
conf
DOI
10.1109/STHERM.1996.545102
Filename
545102
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