Characterization of border traps in III-V MOSFETs using an RF transconductance method

Author

Johansson, Susie ; Mo, Jiongjiong ; Lind, Erik

Author_Institution

Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

53

Lastpage

56

Abstract

The significant defect-induced increase in transconductance at high frequencies in some III-V MOSFETs is utilized to reveal the spatial distribution and energy profile of traps in the gate dielectric. The frequency response of the border traps is modeled as a distributed RC network inserted in the small signal model. Surface-channel InGaAs MOSFETs with Al₂O₃/HfO₂ high-k gate dielectric are evaluated; especially the effects of inserting an InP cap layer in the gate stack.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; hafnium compounds; high-k dielectric thin films; indium compounds; semiconductor device measurement; Al₂O₃-HfO₂; InGaAs; InP; MOSFET; RF transconductance method; border traps; distributed RC network; energy profile; frequency response; gate stack; high k gate dielectric; spatial distribution; Frequency measurement; Indium phosphide; Logic gates; MOSFET; Semiconductor device measurement; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European

Conference_Location

Bucharest

Type

conf

DOI

10.1109/ESSDERC.2013.6818817

Filename

6818817