• DocumentCode
    2147844
  • Title

    Growth of silicon and beryllium doped InP by MBE using solid phosphorus

  • Author

    Baillargeon, J.N. ; Cho, A.Y. ; Fischer, R.J. ; Pearah, P.J. ; Cheng, K.Y.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    148
  • Lastpage
    150
  • Abstract
    Most epitaxial growth techniques for InP require PH3. Such processes are becoming increasing difficult perform because PH3 is highly toxic. Solid phosphorus source MBE offers a less hazardous alternative. This paper describes the properties of Si and Be doped InP grown with red phosphorus using a valved cracking cell
  • Keywords
    III-V semiconductors; beryllium; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; InP:Be; InP:Si; MBE; P; beryllium doped InP; epitaxial growth; red phosphorus; silicon doped InP; solid phosphorus source; valved cracking cell; Atmospheric measurements; Detectors; Impurities; Indium phosphide; Laser excitation; Molecular beam epitaxial growth; Ovens; Silicon; Solids; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328183
  • Filename
    328183
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147844