Title :
Growth of silicon and beryllium doped InP by MBE using solid phosphorus
Author :
Baillargeon, J.N. ; Cho, A.Y. ; Fischer, R.J. ; Pearah, P.J. ; Cheng, K.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Most epitaxial growth techniques for InP require PH3. Such processes are becoming increasing difficult perform because PH3 is highly toxic. Solid phosphorus source MBE offers a less hazardous alternative. This paper describes the properties of Si and Be doped InP grown with red phosphorus using a valved cracking cell
Keywords :
III-V semiconductors; beryllium; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; InP:Be; InP:Si; MBE; P; beryllium doped InP; epitaxial growth; red phosphorus; silicon doped InP; solid phosphorus source; valved cracking cell; Atmospheric measurements; Detectors; Impurities; Indium phosphide; Laser excitation; Molecular beam epitaxial growth; Ovens; Silicon; Solids; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328183
