Title :
Hydrogen purging during growth interruptions and its effect on electron transport in InP/InGaAs/InP HFETS grown by LP-MOVPE
Author :
Kohl, A. ; Mesquida Kusters, A. ; Brittner, S. ; Heime, K. ; Finders, J. ; Gnoth, D. ; Geurts, J. ; Woitok, J.
Author_Institution :
Inst. fur Halbleitertech., Tech. Hochschule Aachen, Germany
Abstract :
InP/InGaAs is a powerful material system for a variety of devices including HFETs. The quality of the heterointerface is very sensitive to growth parameters, especially to the switching sequence of the reactive gases. Improvement of the interface with respect to electron transport was achieved by growth interruptions without group-V stabilization of the surface before growth of the subsequent layer is started
Keywords :
III-V semiconductors; carrier mobility; field effect transistors; gallium arsenide; indium compounds; semiconductor growth; surface scattering; vapour phase epitaxial growth; H; H purging; InGaAs; InP; InP-InGaAs; InP/InGaAs/InP HFET; LP-MOVPE; electron transport; group-V stabilization; growth interruptions; growth parameters; heterointerface; heterojunction field effect transistors; low pressure metalorganic vapour phase epitaxy; reactive gases; subsequent layer; surface; switching sequence; Electrons; Gases; HEMTs; Hydrogen; Indium compounds; Indium gallium arsenide; Indium phosphide; Inductors; MODFETs; Quantum well devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328184
