DocumentCode :
2147863
Title :
Thermal reliability of power insulated gate bipolar transistor (IGBT) modules
Author :
Wu, Wuchen ; Gao, Guo ; Dong, Limin ; Wang, Zhengyuan ; Held, Marcel ; Jacob, Peter ; Scacco, Paolo
Author_Institution :
Electron. Eng. Dept., Beijing Polytech. Univ., China
fYear :
1996
fDate :
5-7 Mar 1996
Firstpage :
136
Lastpage :
141
Abstract :
Thermal behavior of power insulated gate bipolar transistor (IGBT) modules was studied in this paper experimentally. Due primarily to the thermal mismatch in IGBT sandwich structure, thermal stress induced solder fatigue failures, such as the forming and growing of voids and cracks in IGBT solder layers, were quasi-dynamically observed in thermal cycling test. Thermal stress simulation provided stress distribution and bending deformation in IGBT packaging numerically, which is in agreement with the test results. Emitter bonding wire lifting failure and local overheat induced chip burn-out failure, both observed in intermittent operating test, indicate that thermal nonuniform distribution is a main reason affecting IGBT reliability. The study results of this paper are profitable to high reliable IGBT module manufacture and application
Keywords :
bending; fatigue; insulated gate bipolar transistors; power transistors; semiconductor device packaging; semiconductor device reliability; thermal stress cracking; thermal stresses; bending deformation; cracks; emitter bonding wire lifting failure; intermittent operating test; local overheat induced chip burn-out; packaging; power insulated gate bipolar transistor; sandwich structure; solder fatigue failures; stress distribution; thermal cycling test; thermal mismatch; thermal nonuniform distribution; thermal reliability; thermal stress; voids; Bonding; Deformable models; Fatigue; Insulated gate bipolar transistors; Packaging; Pulp manufacturing; Sandwich structures; Testing; Thermal stresses; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 1996. SEMI-THERM XII. Proceedings., Twelfth Annual IEEE
Conference_Location :
Austin, TX
ISSN :
1065-2221
Print_ISBN :
0-7803-3139-7
Type :
conf
DOI :
10.1109/STHERM.1996.545103
Filename :
545103
Link To Document :
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