Assessment of the strain of InP films on Si obtained by HVPE conformal growth

Author

Piffault, N. ; Parillaud, O. ; Gil-Hafon, E. ; Leymarie, J. ; Vasson, A. ; Vasson, A.M. ; Cadoret, R. ; Gérard, B. ; Pribat, D.

Author_Institution

Lab. de Phys. des Milieux Condenses, Univ. Blaise Pascal, Aubiere, France

fYear

1994

fDate

27-31 Mar 1994

Firstpage

155

Lastpage

158

Abstract

The strain of conformal LnP films on Si substrate grown by HVPE from GaAs seeds has been investigated by photoluminescence and X-ray diffraction measurements. A weak tensile strain (E// = 1.3x10-3 at 300 K) is observed in the GaAs seeds grown by MOCVD. It is induced by the difference of the thermal dilatation of GaAs and Si lattices between growth and room temperatures. In contrast, InP lateral films are found quasi relaxed at 300 K. They present a low density of dislocations because of the defect blocking mechanism inherent to the crystal refining technique. Conformal growth is a promising technique to achieve monolithic III-V devices integration on Si chips

Keywords

III-V semiconductors; X-ray diffraction examination of materials; dislocation density; elemental semiconductors; indium compounds; internal stresses; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; silicon; strain measurement; substrates; vapour phase epitaxial growth; 300 K; GaAs; GaAs lattices; GaAs seeds; InP; InP lateral films; Si; Si chip; Si lattices; Si substrate; X-ray diffraction measurements; conformal LnP films; crystal refining technique; defect blocking mechanism; density of dislocations; growth temperatures; hydride vapour phase epitaxy conformal growth; monolithic III-V devices integration; photoluminescence; thermal dilatation; weak tensile strain; Capacitive sensors; Gallium arsenide; Indium phosphide; Lattices; MOCVD; Photoluminescence; Semiconductor films; Strain measurement; Tensile strain; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328185

Filename

328185