Sub-kT Switching in Asymmetric Y-Transistors With Internal Feedback Coupling

Author

Reitzenstein, Stephan ; Hartmann, David ; Kamp, Martin ; Worschech, Lukas

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Berlin, Germany

Volume

3

Issue

3

fYear

2015

fDate

May-15

Firstpage

158

Lastpage

163

Abstract

We report on nonlinear transport phenomena in an asymmetric Y-transistor. The left branch acting as gate for the channel formed between the stem and the right branch of the Y-transistor is isolated from the branching section via a narrow constriction. The transfer characteristics of the Y-transistor is studied at low temperature in two configurations for which the stem is used either as drain contact or source contact. In the latter configuration, internal feedback coupling allows us to demonstrate subthreshold slopes 30% below the thermodynamic kT-limit for conventional field effect transistors.

Keywords

electrical contacts; feedback; field effect transistors; thermodynamics; asymmetric sub-kT switching Y-transistor; drain contact; field effect transistor; internal feedback coupling; nonlinear transport phenomena; source contact; thermodynamic kT-limit; Couplings; Educational institutions; Logic gates; Switches; Temperature; Transistors; Voltage control; Electron devices; field effect transistors; nanoelectronics; nanotechnology; semiconductor devices; semiconductor nanostructures solid state circuits;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2015.2392379

Filename

7010899