Title :
Analytical, Scaleable Large Signal Noise Model for GaAs and InP MMIC Applications
Author :
Reuter, R. ; Leven, A.
Author_Institution :
Fraunhofer Institute of Applied Solid-State Physics, Tullastra?e 72, D-79108 Freiburg, Germany. Phone: +49(0)761-5159820, Fax: +49(0)761-5159565, Email: reuter@iaf.fhg.de
Abstract :
In this paper an analytical large signal noise model for GaAs-and InP-based HFETs is presented. The capability of the model is verified by the comparison of measured and simulated bias dependence of the high frequency noise behaviour of various III/V-devices. Furthermore, the model extraction procedure and the implementation into a commercial microwave design system is shown. The use for MMIC applications is demonstrated by the comparison of measured and simulated noise properties of a single stage optoelectronic receiver for 10 GHz.
Keywords :
Analytical models; Equations; Frequency; Gallium arsenide; HEMTs; Indium phosphide; MMICs; MODFETs; Predictive models; Signal analysis;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338448
