DocumentCode
2147967
Title
Gain modulation in a silicon waveguide using stimulated Raman scattering
Author
Jones, Richard ; Liu, Ansheng ; Rong, Haisheng ; Paniccia, Mario ; Cohen, Oded ; Hak, Dani
Author_Institution
Intel Corp., Santa Clara, CA, USA
fYear
2005
fDate
21-23 Sept. 2005
Firstpage
213
Lastpage
215
Abstract
We demonstrate a novel 75-MHz optical modulator in an SOI waveguide. Modeling of the p-i-n shows device speed is limited by decreasing internal resistance of the p-i-n due to two-photon generated free carriers.
Keywords
optical modulation; optical waveguides; p-i-n diodes; silicon-on-insulator; stimulated Raman scattering; two-photon processes; 75 MHz; SOI waveguide; gain modulation; internal resistance; p-i-n modeling; stimulated Raman scattering; two-photon generated free carriers; Absorption; Nonlinear optics; Optical modulation; Optical pumping; Optical waveguides; PIN photodiodes; Raman scattering; Silicon; Stimulated emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN
0-7803-9070-9
Type
conf
DOI
10.1109/GROUP4.2005.1516456
Filename
1516456
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