DocumentCode :
2147967
Title :
Gain modulation in a silicon waveguide using stimulated Raman scattering
Author :
Jones, Richard ; Liu, Ansheng ; Rong, Haisheng ; Paniccia, Mario ; Cohen, Oded ; Hak, Dani
Author_Institution :
Intel Corp., Santa Clara, CA, USA
fYear :
2005
fDate :
21-23 Sept. 2005
Firstpage :
213
Lastpage :
215
Abstract :
We demonstrate a novel 75-MHz optical modulator in an SOI waveguide. Modeling of the p-i-n shows device speed is limited by decreasing internal resistance of the p-i-n due to two-photon generated free carriers.
Keywords :
optical modulation; optical waveguides; p-i-n diodes; silicon-on-insulator; stimulated Raman scattering; two-photon processes; 75 MHz; SOI waveguide; gain modulation; internal resistance; p-i-n modeling; stimulated Raman scattering; two-photon generated free carriers; Absorption; Nonlinear optics; Optical modulation; Optical pumping; Optical waveguides; PIN photodiodes; Raman scattering; Silicon; Stimulated emission; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
Type :
conf
DOI :
10.1109/GROUP4.2005.1516456
Filename :
1516456
Link To Document :
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