Title :
Gain coupled AlGaInAs/GaInAs DFB-lasers utilizing gratings by masked implantation enhanced intermixing
Author :
Hase, A. ; Kaden, C. ; Kovac, H. ; Hofsass, V. ; Schmidt, B. ; Kunzel, H. ; Schweizer, H.
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
Abstract :
Masked implantation enhanced intermixing (MIEI) offers the advantage of a full planar technology for realization of gain coupled (GC)-DFB-lasers with the potential of a simplified laser/waveguide coupling with a reduced number of process steps for integration. The high implantation contrast reached in the AlGaInAs/GaInAs material system offers the capability of defining DFB-gratings by implantation. The process is based on the precise control of MBE grown Al/GaInAs/GaInAs-MQW´s in terms of high control of uniformity (lateral and vertical) as well as on the overgrowth of implanted regions necessary to accomplish a complete laser structure. We demonstrate GC-DFB-laser operation based on MIEI gratings and in addition the variation of GC-DFB-laser modulation speed by suitable design of the MIEI grating period. Additionally, cleaning of Al-containing surfaces by H* radical treatment for native oxide removal and successful MBE regrowth on AlGaInAs surfaces as a basic requirement for overgrowth of implanted regions is demonstrated
Keywords :
aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; ion implantation; masks; molecular beam epitaxial growth; optical couplers; optical waveguides; semiconductor doping; semiconductor growth; semiconductor lasers; surface treatment; Al-containing surfaces; AlGaInAs-GaInAs; DFB-gratings; GC-DFB-laser modulation speed; H* radical treatment; MBE grown Al/GaInAs/GaInAs-MQW´s; MBE regrowth; MIEI grating period; cleaning; complete laser structure; design; gain coupled AlGaInAs/GaInAs distributed feedback laser; implantation contrast; implanted regions; integration; masked implantation enhanced intermixing; native oxide removal; overgrowth; process steps; simplified laser/waveguide coupling; Cleaning; Gratings; Indium phosphide; Molecular beam epitaxial growth; Optical control; Optical coupling; Optical materials; Optical surface waves; Surface emitting lasers; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328187