• DocumentCode
    2148008
  • Title

    Application of the Finite Element Method to FET Model Parasitic Lumped Elements Extraction

  • Author

    Larique, E. ; Baillargeat, D. ; Verdeyme, S. ; Aubourg, M. ; Teyssier, J.P. ; Guillon, P. ; Zanchi, C. ; Sombrin, J.

  • Author_Institution
    IRCOM Faculté des Sciences de Limoges 87060 Limoges Cedex FRANCE. Email: larique@ircom.unilim.fr
  • Volume
    2
  • fYear
    1999
  • fDate
    Oct. 1999
  • Firstpage
    221
  • Lastpage
    223
  • Abstract
    A classical method to compute Field Effect Transistor (FET) response is the lumped elements model. This equivalent circuit is composed of several elements which characterize the active and/or passive part of the device. We present in this paper an application of the Finite Element Method (FEM) to obtain the FET model extrinsic elements. This method requires 2D and 3D electromagnetic (EM) simulations and replaces the additional measurements at zero drain bias voltage usually used.
  • Keywords
    Circuit simulation; Computational modeling; Electrodes; Electromagnetic coupling; Electromagnetic measurements; Equivalent circuits; Finite element methods; Microwave FETs; Parasitic capacitance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. 29th European
  • Conference_Location
    Munich, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1999.338450
  • Filename
    4139479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2148008