Low pressure pyrolysis of alternative phosphorous precursors for chemical beam epitaxial growth of InP and related compounds

Author

Hill, C.W. ; String, G.B. ; Sadwick, L.P.

Author_Institution

Dept. of Mater. Sci. & Eng., Utah Univ., Salt Lake City, UT, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

167

Lastpage

169

Abstract

The most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine (PH₃). However, because it is highly toxic, alternatives to phosphine have been sought for the growth of phosphorous-containing compounds. We have investigated the pyrolysis rates and reaction products, in low pressure conditions, of three alternative phosphorous precursors: tertiarybutylphosphine (TBP), bisphosphinoethane (BPE) and trisdimethylaminophosphorous (TDMAP)

Keywords

III-V semiconductors; chemical beam epitaxial growth; indium compounds; mass spectra; pyrolysis; semiconductor growth; InP; P source; alternative P precursors; bisphosphinoethane; chemical beam epitaxial growth; low pressure conditions; low pressure pyrolysis; pyrolysis rates; reaction products; tertiarybutylphosphine; trisdimethylaminophosphorous; Chemical compounds; Chemical engineering; Cities and towns; Epitaxial growth; Hydrogen; Indium phosphide; Inductors; Materials science and technology; Molecular beam epitaxial growth; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328188

Filename

328188