Title :
Conductance transient characterization of reactive ion etched HEMT gate recesses
Author :
Schra, Jeff E. ; Mondry, Mark ; Hu, E.L. ; Merz, James L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A simple, novel technique was devised to examine the effects of RIE self-bias voltage, plasma exposure time, and oxygen plasma clean conditions on the AlInAs Schottky contact layer of an InP-based HEMT
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; sputter etching; AlInAs Schottky contact layer; GaInAs; GaInAs ohmic contact layer; GaInAs-AlInAs-InP; InP-based HEMT; O2 plasma clean conditions; RIE self-bias voltage; conductance transient characterization; plasma exposure time; reactive ion etched HEMT gate recesses; Dry etching; Electrical resistance measurement; HEMTs; Lighting; Plasma applications; Plasma devices; Plasma measurements; Polymers; Testing; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328189
