Temperature dependence of breakdown in anisotropic 6H-SiC MOSFET

Author

Li, Liu ; Yin-tang, Yang ; Chang-chun, Chai

Author_Institution

Minist. of Edu. Key Lab. Of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1126

Lastpage

1129

Abstract

The influence of temperature on the breakdown in anisotropic 6H-SiC MOSFET is studied. Taken Si face as an example , the influence of temperature on the breakdown voltage, critical electrical field and specific on-state resistance is thoroughly analyzed. Considering the anisotropy of material, anisotropy of the breakdown is obtained in different face but the tendency of breakdown voltage vs. temperature is same, both has positive temperature coefficient.

Keywords

MOSFET; electric breakdown; electric fields; silicon compounds; wide band gap semiconductors; SiC; anisotropic MOSFET; breakdown voltage; critical electrical field; positive temperature coefficient; silicon face; specific on-state resistance; temperature dependence; Anisotropic magnetoresistance; Charge carrier processes; Electric breakdown; Electrons; Impact ionization; MOSFET circuits; Semiconductor device modeling; Semiconductor materials; Silicon carbide; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734735

Filename

4734735