Title :
MOS Transistors on SOI Substrate: On-Wafer Measurement for Small-Signal Parameters Extraction Procedure
Author :
Bracale, A. ; Fel, N. ; Ferlet-Cavrois, V. ; Pasquet, D. ; Gautier, J.L. ; Pelloie, J.L.
Author_Institution :
ENSEA, ?quipe microonde, 6 avenue du Ponceau, 95014 Cergy-Pontoise, France; CEA, Centre de Bruy?res-Le-Ch?tel, BP 12, 91680 Bruy?res-Le-Ch?tel, France. Tel: 33 1 69 26 50 88. Fax: 33 1 69 26 71 16.
Abstract :
A new extraction procedure for devices on silicium substrate is presented. This paper deals mainly with a reliable estimation of extrinsic series parameters, which is difficult in MOS transistors due to their isolated gate. This method relies in particular on a judicious on-wafer measurements session.
Keywords :
CMOS technology; Calibration; Frequency; Impedance measurement; MOSFETs; Microwave measurements; Parameter extraction; Scattering parameters; Substrates; Voltage;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338451
