• DocumentCode
    2148064
  • Title

    MOS Transistors on SOI Substrate: On-Wafer Measurement for Small-Signal Parameters Extraction Procedure

  • Author

    Bracale, A. ; Fel, N. ; Ferlet-Cavrois, V. ; Pasquet, D. ; Gautier, J.L. ; Pelloie, J.L.

  • Author_Institution
    ENSEA, ?quipe microonde, 6 avenue du Ponceau, 95014 Cergy-Pontoise, France; CEA, Centre de Bruy?res-Le-Ch?tel, BP 12, 91680 Bruy?res-Le-Ch?tel, France. Tel: 33 1 69 26 50 88. Fax: 33 1 69 26 71 16.
  • Volume
    2
  • fYear
    1999
  • fDate
    Oct. 1999
  • Firstpage
    224
  • Lastpage
    227
  • Abstract
    A new extraction procedure for devices on silicium substrate is presented. This paper deals mainly with a reliable estimation of extrinsic series parameters, which is difficult in MOS transistors due to their isolated gate. This method relies in particular on a judicious on-wafer measurements session.
  • Keywords
    CMOS technology; Calibration; Frequency; Impedance measurement; MOSFETs; Microwave measurements; Parameter extraction; Scattering parameters; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. 29th European
  • Conference_Location
    Munich, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1999.338451
  • Filename
    4139480
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2148064