DocumentCode
2148067
Title
3.7 W CW operation of
Author
Kondo, Makoto ; Suyama, Takuro ; Hayakawa, Takeshi ; Yamamoto, Seiichi ; Hijikata, T.
Author_Institution
Sharp Corp., Nara, Japan
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
311
Lastpage
314
Abstract
High-power (3.7 W) CW operation has been achieved in
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 100 micron; 3.7 W; 320 mA; 50 percent; CW operation; CW output power; GRIN-SCH-QW lasers; GaAs-AlGaAs; broad-area laser; graded-index separate-confinement-heterostructure; low threshold current; molecular beam epitaxy; power conversion efficiency; quantum well lasers; semiconductors; stripe geometry; Epitaxial growth; Gallium arsenide; Laser stability; Molecular beam epitaxial growth; Optical films; Power conversion; Power lasers; Quantum well lasers; Semiconductor laser arrays; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32819
Filename
32819
Link To Document